04/05/2011

The 'ion implantation is a proven technology in the electronics world. Born in 1954 for doping the semiconductor industry, this process allows the implantation of ions of different nature in a solid substrate by changing its physical properties.

The advantages of this technique are represented by the possibility of achieving very precise concentration profiles, controlling the number of implanted ions and their depth of penetration. Also is a process that occurs at temper at ure lowest compared to other techniques of doping and produces no chemical reactions potentially polluting.